SoS

Passives

The great benefits of designing chips using Silicon-on-Sapphire technology are the high quality passive components (inductors, capacitors, resistors) that can be integrated.

This makes it ideal for mixed signal applications - especially RF circuitry.

Inductors

In RF integrated circuits, inductors are required for:

  • Impedance matching
  • Resonant circuits (VCO) and filters
  • Transformers, baluns

 

Inductors are therefore a critical limiting component in highly integrated RFICs.

High Q inductors are very beneficial because they have:

 

  • Lower losses in matching networks
  • Better frequency selectivity
  • Lower VCO phase noise

The following is the equivalent circuit of an inductor on a semi-insulating substrate:

Inductor Equivalent Circuit

  • Q = |Im[Y11]/Re[Y11] = wLs/(Rs+w2RpCp2[(Rs2+w2Ls2)/(1+w2Rp2Cp2)]
  • The effect of substrate resistance (Rp) is very high
  • Q of 3-4 in bulk Si technology is common
  • If Rp is very large (UTSi case), Q is totally dominated by Rs and Q is simply = wLs/ Rs.
  • In SoS, inductor designs focus on reduction of Rs only.
  • In SoS, QL > 40 (e.g. at 2 GHz for 5 nH inductor) is very achieveable.

The following graph compares inductors on Bulk CMOS and SoS process technologies.

Inductor graph